F3L75R12W1H3B27BOMA1 related parameters_F3L75R12W1H3B27BOMA1 PDF documentation_Infineon Technologies

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：1,434(Ref. price)

Qty.	Unit Price	Ext. Price
1	$52.33550	$52.33550

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Configuration	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	45 A
Power - Max	275 W
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 30A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	4.4 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

Price advantage, F3L75R12W1H3B27BOMA1 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
FF450R12KE4HOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 520A 2400W	$178.03950	In Stock:879
IXSN80N60BD1	IXYS	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 600V 160A 420W SOT227B	No price	In Stock:17754
MWI30-12E6K	IXYS	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 29A 130W E1	No price	In Stock:17756
F3L400R12PT4B26BOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 600A 2150W	$316.39953	In Stock:17758
FF600R17ME4BOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE VCES 1700V 600A	$352.71720	In Stock:884