MIXA225PF1200TSF related parameters_MIXA225PF1200TSF PDF documentation_IXYS

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Box
IGBT Type	PT
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	360 A
Power - Max	1100 W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 225A
Current - Collector Cutoff (Max)	300 µA
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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