FZ1200R33KF2CS1NOSA1 related parameters_FZ1200R33KF2CS1NOSA1 PDF documentation_Infineon Technologies

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	-
Configuration	Full Bridge
Voltage - Collector Emitter Breakdown (Max)	3300 V
Current - Collector (Ic) (Max)	2000 A
Power - Max	14500 W
Vce(on) (Max) @ Vge, Ic	4.25V @ 15V, 1.2kA
Current - Collector Cutoff (Max)	12 mA
Input Capacitance (Cies) @ Vce	150 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 125°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	-

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