MWI50-12E7 related parameters_MWI50-12E7 PDF documentation_IXYS

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Box
IGBT Type	NPT
Configuration	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	90 A
Power - Max	350 W
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 50A
Current - Collector Cutoff (Max)	800 µA
Input Capacitance (Cies) @ Vce	3.8 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Chassis Mount
Package / Case	E2
Supplier Device Package	E2

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