IRG7T100HF12B related parameters_IRG7T100HF12B PDF documentation_Infineon Technologies

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Box
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	200 A
Power - Max	680 W
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 100A
Current - Collector Cutoff (Max)	2 mA
Input Capacitance (Cies) @ Vce	13 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	POWIR® 62 Module
Supplier Device Package	POWIR® 62

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