FF200R12KE3B2HOSA1 related parameters_FF200R12KE3B2HOSA1 PDF documentation_Infineon Technologies

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	295 A
Power - Max	1050 W
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 200A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	14 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 125°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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