MIO600-65E11 related parameters_MIO600-65E11 PDF documentation_IXYS

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	NPT
Configuration	Single Switch
Voltage - Collector Emitter Breakdown (Max)	6500 V
Current - Collector (Ic) (Max)	600 A
Power - Max	-
Vce(on) (Max) @ Vge, Ic	4.2V @ 15V, 600A
Current - Collector Cutoff (Max)	120 mA
Input Capacitance (Cies) @ Vce	150 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Chassis Mount
Package / Case	E11
Supplier Device Package	E11

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