NXH350N100H4Q2F2S1G related parameters_NXH350N100H4Q2F2S1G PDF documentation_ON Semiconductor

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	Trench Field Stop
Configuration	Three Level Inverter
Voltage - Collector Emitter Breakdown (Max)	1000 V
Current - Collector (Ic) (Max)	303 A
Power - Max	276 W
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 375A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	24.146 nF @ 20 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	42-PIM/Q2PACK (93x47)

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