VS-GP400TD60S related parameters_VS-GP400TD60S PDF documentation_Vishay General Semiconductor

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	PT, Trench
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	758 A
Power - Max	1563 W
Vce(on) (Max) @ Vge, Ic	1.52V @ 15V, 400A
Current - Collector Cutoff (Max)	200 µA
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Dual INT-A-PAK (3 + 8)
Supplier Device Package	Dual INT-A-PAK

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