FF600R12IE4PNOSA1 related parameters_FF600R12IE4PNOSA1 PDF documentation_Infineon Technologies

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,050(Ref. price)

Qty.	Unit Price	Ext. Price
1	$542.66188	$542.66188

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	Trench Field Stop
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	600 A
Power - Max	3350 W
Vce(on) (Max) @ Vge, Ic	2.05V @ 15V, 600A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	37 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

Price advantage, FF600R12IE4PNOSA1 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
F3L300R12MT4PB22BPSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE MED POWER ECONO	$207.38025	In Stock:17616
DF75R12W1H4FB11BOMA2	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 25A 20MW	$72.09200	In Stock:17618
VS-92-0173	Vishay General Semiconductor - Diodes Division	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 90A POS HALF MTK	No price	In Stock:17620
DF100R07W1H5FPB53BPSA2	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 650V 40A 20MW	$59.19910	In Stock:772
F475R12KS4B11BOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 100A 500W	$141.07590	In Stock:17626