IXBN75N170A related parameters_IXBN75N170A PDF documentation_IXYS

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	BIMOSFET™
Package	Tube
IGBT Type	-
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	75 A
Power - Max	625 W
Vce(on) (Max) @ Vge, Ic	6V @ 15V, 42A
Current - Collector Cutoff (Max)	50 µA
Input Capacitance (Cies) @ Vce	7.4 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Supplier Device Package	SOT-227B

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