GA400TD25S related parameters_GA400TD25S PDF documentation_Vishay General Semiconductor

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	250 V
Current - Collector (Ic) (Max)	400 A
Power - Max	1350 W
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 400A
Current - Collector Cutoff (Max)	500 µA
Input Capacitance (Cies) @ Vce	36 nF @ 30 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Dual INT-A-PAK (3 + 8)
Supplier Device Package	Dual INT-A-PAK

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