SNXH80T120L2Q0P2G related parameters_SNXH80T120L2Q0P2G PDF documentation_ON Semiconductor

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	Trench Field Stop
Configuration	Three Level Inverter
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	67 A
Power - Max	158 W
Vce(on) (Max) @ Vge, Ic	2.85V @ 15V, 80A
Current - Collector Cutoff (Max)	300 µA
Input Capacitance (Cies) @ Vce	19.4 nF @ 20 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	20-PIM/Q0PACK (55x32.5)

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