DF200R12W1H3B27BOMA1 related parameters_DF200R12W1H3B27BOMA1 PDF documentation_Infineon Technologies

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Configuration	2 Independent
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	30 A
Power - Max	375 W
Vce(on) (Max) @ Vge, Ic	1.3V @ 15V, 30A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	2 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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