VS-GB150YG120NT related parameters_VS-GB150YG120NT PDF documentation_Vishay General Semiconductor

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	NPT
Configuration	Full Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	182 A
Power - Max	892 W
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 200A
Current - Collector Cutoff (Max)	120 µA
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	ECONO3 4PACK

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