MIEB100W1200TEH related parameters_MIEB100W1200TEH PDF documentation_IXYS

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Box
IGBT Type	-
Configuration	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	183 A
Power - Max	630 W
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 100A
Current - Collector Cutoff (Max)	300 µA
Input Capacitance (Cies) @ Vce	7.43 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Chassis Mount
Package / Case	E3
Supplier Device Package	E3

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