VS-GB150TS60NPBF related parameters_VS-GB150TS60NPBF PDF documentation_Vishay General Semiconductor

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	NPT
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	138 A
Power - Max	500 W
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 150A
Current - Collector Cutoff (Max)	200 µA
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	INT-A-PAK (3 + 4)
Supplier Device Package	INT-A-PAK

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