F423MR12W1M1B11BOMA1 related parameters_F423MR12W1M1B11BOMA1 PDF documentation_Infineon Technologies

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	Trench
Configuration	Full Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Power - Max	0.2 W
Vce(on) (Max) @ Vge, Ic	-
Current - Collector Cutoff (Max)	-
Input Capacitance (Cies) @ Vce	3.68 nF @ 800 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	AG-EASY1BM-2

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