IXGE200N60B related parameters_IXGE200N60B PDF documentation_IXYS

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	HiPerFAST™
Package	Tube
IGBT Type	-
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	160 A
Power - Max	416 W
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 120A
Current - Collector Cutoff (Max)	200 µA
Input Capacitance (Cies) @ Vce	11 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	ISOPLUS227™
Supplier Device Package	ISOPLUS227™

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