GB100XCP12-227 related parameters_GB100XCP12-227 PDF documentation_GeneSiC Semiconductor

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	PT
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	100 A
Power - Max	-
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 100A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	8.55 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SOT-227-4
Supplier Device Package	SOT-227

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