SI2365EDS-T1-GE3 related parameters_SI2365EDS-T1-GE3 PDF documentation_Vishay Siliconix

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	32mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 8 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236
Package / Case	TO-236-3, SC-59, SOT-23-3

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