TPCP8005-H(TE85L,F related parameters_TPCP8005-H(TE85L,F PDF documentation_Toshiba Semiconductor and Storage

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSV-H
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12.9mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2150 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	840mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PS-8 (2.9x2.4)
Package / Case	8-SMD, Flat Lead

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