NTLJS1102PTBG related parameters_NTLJS1102PTBG PDF documentation_ON Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8 V
Current - Continuous Drain (Id) @ 25°C	3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	36mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id	720mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 4.5 V
Vgs (Max)	±6V
Input Capacitance (Ciss) (Max) @ Vds	1585 pF @ 4 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-WDFN (2x2)
Package / Case	6-WDFN Exposed Pad

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