G6N02L related parameters_G6N02L PDF documentation_Goford Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	11.3mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	0.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.5 nC @ 10 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1140 pF @ 10 V
FET Feature	Standard
Power Dissipation (Max)	1.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3

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