HAT1069C-EL-E related parameters_HAT1069C-EL-E PDF documentation_Renesas Electronics America Inc

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	52mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1380 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	6-CMFPAK
Package / Case	6-SMD, Flat Leads

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