BSZ011NE2LS5IATMA1 related parameters_BSZ011NE2LS5IATMA1 PDF documentation_Infineon Technologies

MOSFETs - Single

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Specifications

Description	Details
Series	OptiMOS™ 5
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	35A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3400 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8-FL
Package / Case	8-PowerTDFN

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