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APTM120SK29TG Picture

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APTM120SK29TG

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In Stock:18,500(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
348mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
374 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
10300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
780W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SP4
Package / Case
SP4
Other
Price advantage, APTM120SK29TG is available in stock and can be delivered on the same day
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