IXTA1R6N100D2HV related parameters_IXTA1R6N100D2HV PDF documentation_IXYS

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	0V
Rds On (Max) @ Id, Vgs	10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id	4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	645 pF @ 10 V
FET Feature	Depletion Mode
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263HV
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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