G2R1000MT17J related parameters_G2R1000MT17J PDF documentation_GeneSiC Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	G2R™
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id	4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds	139 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	54W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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