UF3C120150K4S related parameters_UF3C120150K4S PDF documentation_UnitedSiC

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	180mOhm @ 5A, 12V
Vgs(th) (Max) @ Id	5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	25.7 nC @ 12 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	738 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	166.7W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4

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