NTD4910NT4G related parameters_NTD4910NT4G PDF documentation_ON Semiconductor

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：70,205(Ref. price)

Qty.	Unit Price	Ext. Price
1	$0.17640	$0.17640

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	8.2A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1.203 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.37W (Ta), 27.3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

Other

Price advantage, NTD4910NT4G is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
APTC80DA15T1G	Microsemi Corporation	MOSFETs - Single	Datasheet	MOSFET N-CH 800V 28A SP1	No price	In Stock:18718
IXFK24N100F	IXYS	MOSFETs - Single	Datasheet	MOSFET N-CH 1000V 24A TO264	No price	In Stock:18720
IPC60R280E6UNSAWNX6SA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH BARE DIE	No price	In Stock:18724
IPI100N10S305AKSA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 100A TO262-3	No price	In Stock:18732
PSMN4R1-60YLX	Nexperia USA Inc.	MOSFETs - Single	Datasheet	MOSFET N-CH 60V 100A LFPAK56	$0.56167	In Stock:18734