EMH2801-TL-H related parameters_EMH2801-TL-H PDF documentation_ON Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	85mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	4 nC @ 4.5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	320 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-EMH
Package / Case	8-SMD, Flat Lead

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