APT1003RSFLLG related parameters_APT1003RSFLLG PDF documentation_Microchip Technology

MOSFETs - Single

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Specifications

Description	Details
Series	*
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	694 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	D3 [S]
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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