2SK536-TB-E related parameters_2SK536-TB-E PDF documentation_ON Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	20Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	15 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	200mW (Ta)
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-59
Package / Case	TO-236-3, SC-59, SOT-23-3

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