IXTA54N30T related parameters_IXTA54N30T PDF documentation_IXYS

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300 V
Current - Continuous Drain (Id) @ 25°C	54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (IXTA)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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