TPCP8001-H(TE85LFM related parameters_TPCP8001-H(TE85LFM PDF documentation_Toshiba Semiconductor and Storage

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSIII
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	16mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	640 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 30W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PS-8 (2.9x2.4)
Package / Case	8-SMD, Flat Lead

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