SSM3K35MFV(TPL3) related parameters_SSM3K35MFV(TPL3) PDF documentation_Toshiba Semiconductor and Storage

MOSFETs - Single

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Specifications

Description	Details
Series	π-MOSVI
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4V
Rds On (Max) @ Id, Vgs	3Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	9.5 pF @ 3 V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VESM
Package / Case	SOT-723

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