IPB06N03LA related parameters_IPB06N03LA PDF documentation_Infineon Technologies

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,792(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	OptiMOS™
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2653 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Other

Price advantage, IPB06N03LA is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
APT66M60B2	Microchip Technology	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 70A T-MAX	$14.46850	In Stock:19986
DMN3031LSS-13	Diodes Incorporated	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 9A 8SOP	No price	In Stock:19988
FDS6685	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET P-CH 30V 8.8A 8SOIC	No price	In Stock:19996
TK16J60W,S1VQ	Toshiba Semiconductor and Storage	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 15.8A TO3P	No price	In Stock:20000
IRF3710ZLPBF	International Rectifier	MOSFETs - Single	Datasheet	HEXFET POWER MOSFET	$0.46530	In Stock:20004