IXFN210N20P related parameters_IXFN210N20P PDF documentation_IXYS

MOSFETs - Single

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Specifications

Description	Details
Series	HiPerFET™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	188A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	255 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	18600 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1070W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC

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