SI1021R-T1-E3 related parameters_SI1021R-T1-E3 PDF documentation_Vishay Siliconix

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.7 nC @ 15 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	23 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	250mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-75A
Package / Case	SC-75A

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