STQ1HNK60R-AP related parameters_STQ1HNK60R-AP PDF documentation_STMicroelectronics

MOSFETs - Single

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Specifications

Description	Details
Series	SuperMESH™
Package	Cut Tape (CT)Tape & Box (TB)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	156 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)

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