IMW120R090M1HXKSA1 related parameters_IMW120R090M1HXKSA1 PDF documentation_Infineon Technologies

MOSFETs - Single

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Specifications

Description	Details
Series	CoolSiC™
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1.2 kV
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id	5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	707 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	115W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3

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