BS250P related parameters_BS250P PDF documentation_Diodes Incorporated

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	45 V
Current - Continuous Drain (Id) @ 25°C	230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	60 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92
Package / Case	TO-226-3, TO-92-3 (TO-226AA)

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