BTS282ZAKSA1 related parameters_BTS282ZAKSA1 PDF documentation_Infineon Technologies

MOSFETs - Single

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Specifications

Description	Details
Series	TEMPFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	49 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id	2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs	232 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4.8 pF @ 25 V
FET Feature	Temperature Sensing Diode
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	P-TO220-7-3
Package / Case	TO-220-7

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