IRF6655TR1 related parameters_IRF6655TR1 PDF documentation_Infineon Technologies

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4.8V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	11.7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	530 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.2W (Ta), 42W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ SH
Package / Case	DirectFET™ Isometric SH

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