STL18N55M5 related parameters_STL18N55M5 PDF documentation_STMicroelectronics

MOSFETs - Single

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Specifications

Description	Details
Series	MDmesh™ V
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	550 V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	270mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1352 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 90W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerFlat™ (8x8) HV
Package / Case	8-PowerVDFN

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