IXTY01N100D related parameters_IXTY01N100D PDF documentation_IXYS

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	110Ohm @ 50mA, 0V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	120 pF @ 25 V
FET Feature	Depletion Mode
Power Dissipation (Max)	1.1W (Ta), 25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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