2SK4080-ZK-E1-AY related parameters_2SK4080-ZK-E1-AY PDF documentation_Renesas Electronics America Inc

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	9mOhm @ 24A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 12 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1.67 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 29W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252 (MP-3Z)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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