IXTY32P05T related parameters_IXTY32P05T PDF documentation_IXYS

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchP™
Package	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	39mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	1975 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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