TP65H050WS related parameters_TP65H050WS PDF documentation_Transphorm

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	119W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

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